ASTM E2481-12(2023) PDF

SIGNIFICANCE AND USE 4.1 The design of a photovoltaic module or system intended to provide safe conversion of the sun's radiant energy into useful electricity must take into consideration the possibility of partial shadowing of the module(s) during operation. This test method describes a procedure for verifying that the design and construction of the module provides adequate protection against the potential harmful effects of hot spots during normal installation and use. 4.2 This test method describes a procedure for determining the ability of the module to provide protection from internal defects which could cause loss of electrical insulation or combustion hazards. 4.3 Hot spot heating occurs in a module when its operating current exceeds the reduced short-circuit current (ISC) of a shadowed or faulty cell or group of cells. When such a condition occurs, the affected cell or group of cells is forced into reverse bias and must dissipate power, which can cause overheating. Note 1: The correct use of bypass diodes can prevent hot spot damage from occurring. 4.4 Fig. 1 illustrates the hot spot effect in a module of a series string of cells, one of which, cell Y, is partially shadowed. The amount of electrical power dissipated in Y is equal to the product of the module current and the reverse voltage developed across Y. For any irradiance level, when the reverse voltage across Y is equal to the voltage generated by the remaining (s-1) cells in the module, power dissipation is at a maximum when the module is short-circuited. This is shown in Fig. 1 by the shaded rectangle constructed at the intersection of the reverse I-V characteristic of Y with the image of the forward I-V characteristic of the (s-1) cells. FIG. 1 Hot Spot Effect 4.5 Bypass diodes, if present, as shown in Fig. 2, begin conducting when a series-connected string in a module is in reverse bias, thereby limiting the power dissipation in the reduced-output cell. FIG. 2 Bypass Diode Effect Note 2: If the ... SCOPE 1.1 This test method provides a procedure to determine the ability of a photovoltaic (PV) module to endure the long-term effects of periodic “hot spot” heating associated with common fault conditions such as severely cracked or mismatched cells, single-point open circuit failures (for example, interconnect failures), partial (or nonuniform) shadowing, or soiling. Such effects typically include solder melting or deterioration of the encapsulation, but in severe cases could progress to combustion of the PV module and surrounding materials. 1.2 There are two ways that cells can cause a hot spot problem: either by having a high resistance so that there is a large resistance in the circuit, or by having a low resistance area (shunt) such that there is a high current flow in a localized region. This test method selects cells of both types to be stressed. 1.3 This test method does not establish pass or fail levels. The determination of acceptable or unacceptable results is beyond the scope of this test method. 1.4 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.