ASTM F95-89(2000) PDF
Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
Название (английский):
ASTM F95-89(2000)
Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
- Статус документа:
- Отменён
- Формат:
- Электронный (PDF)
- Дата публикации:
- 16 августа 2017 г.
- SKU:
- ASTM F95-89(2000)
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Срок поставки:1 раб. дн. (перевод)
Цена:15 €
Abstract
ScopeThis standard was transferred to SEMI (www.semi.org) May 20031.1 This test method provides a technique for the measurement of the thickness of epitaxial layers of silicon deposited on silicon substrates. A dispersive infrared spectroph...
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