BS EN 62047-12:2011 PDF
Semiconductor devices. Micro-electromechanical devices - Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
Semiconductor devices. Micro-electromechanical devices - Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Дата публикации:
- 30 ноября 2011 г.
- ICS:
- 31.080.99
- Технический комитет:
- CENELEC
- SKU:
- BS EN 62047-12:2011
Abstract
1 Scope This part of IEC 62047 specifies a method for bending fatigue testing using resonant vibration of microscale mechanical structures of MEMS (micro-electromechanical systems) and micromachines. This standard applies to vibrating structures ranging in size from 10 μm to 1 000 μm in the plane direction and from 1 μm to 100 μm in thickness, and test materials measuring under 1 mm in length, under 1 mm in width, and between 0,1 μm and 10 μm in thickness. The main structural materials for MEMS, micromachine, etc. have special features, such as typical dimensions of a few microns, material fabrication by deposition, and test piece fabrication by means of non-mechanical machining, including photolithography. The MEMS structures often have higher fundamental resonant frequency and higher strength than macro structures. To evaluate and assure the lifetime of MEMS structures, a fatigue testing method with ultra high cycles (up to 10 12 ) loadings needs to be established. The object of the test method is to evaluate the mechanical fatigue properties of microscale materials in a short time by applying high load and high cyclic frequency bending stress using resonant vibration.
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