BS EN 62047-16:2015 PDF
Semiconductor devices. Micro-electromechanical devices - Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods
Semiconductor devices. Micro-electromechanical devices - Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Дата публикации:
- 31 июля 2015 г.
- ICS:
- 31.080.99
- Технический комитет:
- CENELEC
- SKU:
- BS EN 62047-16:2015
Abstract
What is BS EN 62047-16 – Determining the residual stress of MEMS films about?
BS EN 62047-16 is the 16th part of an international standard used for semiconductor devices. BS EN 62047-16 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μm to 10 μm in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of known mechanical properties of Young’s modulus and Poisson’s ratio. These
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