BS EN 62979:2017 PDF
Photovoltaic modules. Bypass diode. Thermal runaway test (IEC 2979:2017)
Photovoltaic modules. Bypass diode. Thermal runaway test (IEC 2979:2017)
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Дата публикации:
- 30 ноября 2017 г.
- ICS:
- 27.160
- SKU:
- BS EN 62979:2017
Abstract
What is BS EN 62979 - Thermal runaway test for bypass diodes about ?
BS EN 62979 provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway. The test specimens which employ P/N diodes as bypass diodes ...
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