ASTM STP32681S
Neutron Transmutation Doping of Semi-Insulating Czochralskigrown GaAs
Neutron Transmutation Doping of Semi-Insulating Czochralskigrown GaAs
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- D
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- ASTM STP32681S
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Abstract
We have carried out neutron transmutation doping of undoped, initially semi-insulating, Czochralski-grown GaAs. We employed a series of nine neutron doses, which added between 2×1015 and 5×1017 cm−3 Ge and Se to the samples. Electron co...
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