BS IEC 63068-2:2019
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Дата публикации:
- 28 февраля 2019 г.
- ICS:
- 31.080.99
- SKU:
- BS IEC 63068-2:2019
Abstract
What is BS IEC 63068 ‑ 2 - Silicon carbide homoepitaxial (SiC) wafer about?
BS IEC 63068 is a series of international standards for semiconductor devices that specifies the defects in silicon carbide homoepitaxial (SiC) wafer used in semiconductor devices.
BS IEC 63068 ‑ 2 is the second part of the series of documents that provides definitions and guidance in the use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers.
BS IEC 63068 <b data-mce-fragme...
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