BS IEC 63068-3:2020
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using photoluminescence
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using photoluminescence
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Дата публикации:
- 31 июля 2020 г.
- ICS:
- 31.080.01
- SKU:
- BS IEC 63068-3:2020
Abstract
What is BS IEC 63068 ‑ 3 about?
BS IEC 63068 ‑ 3 is the international standard for semiconductors devices that specifies the test methods which helps in detecting the defects in silicon carbide homoepitaxial wafer.
BS IEC 63068 ‑ 3 is the third part of Semiconductor devices in multi-series standard.
BS IEC 63068 ‑ 3 provides definitions and guidance in the use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers.
Who is BS IEC 63068 ‑ 3 fo...
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