IEC 60747-9:2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 160
- Дата публикации:
- 13 ноября 2019 г.
- Издание:
- IEC IS 60747 edition 3 version 1
- ICS:
- 31.080.01
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). This third edition includes the following significant technical changes with respect to the previous edition: reverse-blocking IGBT and its related technical contents have been added; reverse-conducting IGBT and its related technical contents have been added; some parts of the previous edition have been amended, combined or deleted.
Abstract
Overview
IEC 60747-9:2019 is the international standard that defines product-specific requirements for insulated-gate bipolar transistors (IGBTs). Part 9 of the IEC 60747 series addresses discrete semiconductor devices, focusing exclusively on IGBTs. This third edition integrates new technical content, including specifications for reverse-blocking IGBTs and reverse-conducting IGBTs, reflecting recent advancements in semiconductor device technology.
The standard covers essential terminology, letter symbols, ratings and characteristics, verification procedures, and measurement methods specific to IGBTs. It serves as a comprehensive reference to ensure consistency, quality, and interoperability in components used across power electronics applications.
Key features include:
- Definitions and standardized terms related to IGBTs
- Specifications for electrical, thermal, and mechanical ratings
- Guidance on testing methods and verification of ratings
- Inclusion of reverse-blocking and reverse-conducting IGBT technologies
Key Topics
Terminology and Symbols
The document provides precise definitions for terms associated with IGBTs, including voltages, currents, thermal properties, and switching characteristics. It specifies letter symbols and graphical symbols to standardize communication across technical documentation.
Ratings and Characteristics
IEC 60747-9 details essential ratings such as:
- Collector-emitter voltages including breakdown and sustaining voltages
- Gate-emitter voltage limits
- Continuous and peak current ratings for conduction and reverse conduction
- Power dissipation and thermal resistance measures
- Safe Operating Areas (SOA) for forward and reverse bias conditions
Measurement and Verification Methods
The standard stipulates standardized methods to measure:
- Collector-emitter saturation voltage
- Gate threshold voltages
- Gate charge and internal gate resistance
- Switching times and energies
- Reverse and forward recovery characteristics for reverse-blocking and reverse-conducting IGBTs
Reliability and Acceptance Tests
IEC 60747-9 outlines endurance, reliability, type, and routine test protocols to confirm device robustness and performance under operational stresses. This ensures manufacturers meet quality standards and devices maintain operational safety.
Applications
IGBTs covered under this standard are critical in high-efficiency power electronics applications, including:
- Electric vehicles and traction systems
- Renewable energy inverters (solar, wind)
- Industrial motor drives and automation
- Power supplies and uninterruptible power supplies (UPS)
- Consumer electronics requiring efficient switching and high voltage handling
By following IEC 60747-9:2019, manufacturers and engineers can ensure device interoperability, reliable performance, and adherence to global safety and quality benchmarks, thereby facilitating international trade and product development in the semiconductor industry.
Related Standards
- IEC 60747 Series – Covers semiconductor devices with different parts addressing various transistor types and diodes.
- IEC 60068 – Environmental testing for electrical and electronic products, relevant to endurance and reliability tests referenced in IEC 60747-9.
- IEC 61000 Series – Electromagnetic compatibility standards pertinent to semiconductor device operation in electrical environments.
- JEDEC Standards – Industry-specific standards on semiconductor device testing that complement IEC technical guidelines.
Compliance with IEC 60747-9:2019 supports conformance to these broader standards while providing detailed, device-specific technical conditions essential for insulated-gate bipolar transistors.
Keywords: IEC 60747-9, insulated-gate bipolar transistors, IGBT standard, semiconductor device standards, reverse-blocking IGBT, reverse-conducting IGBT, power transistor ratings, IGBT measurement methods, IGBT characteristics, power electronics components, semiconductor reliability testing.
Технические детали
- Технический комитет
- SC 47E - Discrete semiconductor devices
- SKU
- IEC 60747-9:2019
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