ISO 14237:2010

Name: ISO 14237:2010 — Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials
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Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials

Название (английский):

ISO 14237:2010

Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in silicon using uniformly doped materials

Статус документа:: Действующий
Формат:: Электронный (PDF)
Количество страниц:: 19
Дата публикации:: 9 июля 2010 г.
Издание:: ISO IS 14237 edition 2 version 1
ICS:: 71.040.40

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Описание (английский):

ISO 14237:2010 specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 x 1016 atoms/cm3 to 1 x 1020 atoms/cm3.

Abstract

Похожие стандарты

Упомянутые в описании и другие стандарты ISO

Overview

ISO 14237:2010 - Surface chemical analysis - Secondary‑ion mass spectrometry (SIMS) - specifies a standardized SIMS method for the quantitative determination of boron atomic concentration in single‑crystalline silicon using uniformly doped materials. The procedure covers calibration of laboratory (secondary) reference materials (bulk RMs) against a certified, ion‑implanted primary reference material (CRM) and is applicable to boron concentrations from 1 × 10^16 to 1 × 10^20 atoms/cm^3.

Key topics and technical requirements

Measurement principle: Use of an oxygen (O2+) or caesium (Cs+) primary ion beam to sputter the silicon surface and mass‑analyse emitted secondary ions (B isotopes or B–Si molecular ions).

Reference materials: Calibration requires a CRM (ion‑implanted boron in Si, e.g., NIST SRM 2137 at time of publication) to derive an isotopic relative sensitivity factor (RSF) and laboratory bulk RMs (RM‑A, RM‑B, RM‑C for low/mid/high dopings and RM‑BG for background).

Bulk RM requirements: Single‑crystal or epi silicon wafers (≈100 μm epitaxial layer if used), uniformly doped with natural‑isotopic boron and with boron gradient < 5 % per cm.

Detected species: For O2+ primary beam detect 10B and 11B; for Cs+ detect 10B28Si+ and 11B28Si+. Silicon ion species are measured as reference signals.

Calibration & calculation: Measure depth profiles of CRM (ISO 17560 procedures) and compute RSF (ISO 18114) from integrated ion intensity ratios and known implanted dose Φimp.

Measurement practice: Mirror‑polished specimens, detector saturation avoidance (reduce primary current if B > 1×10^5 counts/s), multi‑cycle measurements at multiple positions, and use RM‑BG for background subtraction.

Quality & performance: Annex C provides apparatus performance checks and linearity tests; Annex A/B cover resistivity → carrier density and isotope‑ratio considerations.

Practical applications

Process control and doping verification in semiconductor wafer manufacturing.

Metrology and calibration of SIMS instruments for accurate boron profiling.

Failure analysis and R&D where precise boron concentration in silicon is required.

Establishing lab‑level working reference materials for routine SIMS analyses.

Related standards

ISO 17560 - SIMS method for depth profiling of boron in silicon (referenced for depth‑profile practice)

ISO 18114 - Determination of relative sensitivity factors from ion‑implanted reference materials (used for RSF calculation)

Keywords: ISO 14237:2010, SIMS, secondary‑ion mass spectrometry, boron concentration, silicon, calibrated reference materials, CRM, RSF, NIST SRM.

ISO 14237:2010

Abstract

Похожие стандарты

ISO 14237:2010

Abstract

Похожие стандарты

Overview

Key topics and technical requirements

Practical applications

Who should use this standard

Related standards

Технические детали

BS ISO 17560:2014

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon.

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