ISO 23812:2009

Name: ISO 23812:2009 — Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
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Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials

Название (английский):

ISO 23812:2009

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials

Статус документа:: Действующий
Формат:: Электронный (PDF)
Количество страниц:: 19
Дата публикации:: 8 апреля 2009 г.
Издание:: ISO IS 23812 edition 1 version 1
ICS:: 71.040.40

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Описание (английский):

ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials. It is not applicable to the surface-transient region where the sputtering rate is not in the steady state. It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.

Abstract

Похожие стандарты

Упомянутые в описании и другие стандарты ISO

Overview

ISO 23812:2009 specifies a standardized procedure to calibrate the depth scale in shallow-region SIMS (Secondary‑Ion Mass Spectrometry) depth profiling of silicon using multiple delta‑layer reference materials. The method targets depths less than 50 nm, is not intended for the surface‑transient (non‑steady sputtering) region, and applies to single‑crystalline, polycrystalline and amorphous silicon. The standard helps correct depth shifts caused by transient sputtering‑rate changes during the initial stages of ion bombardment.

Key topics and requirements

Scope and applicability

Calibrates the depth scale in the near‑surface region (< 50 nm) for silicon SIMS depth profiles.
Excludes the non‑equilibrium surface‑transient zone where sputtering rate is not steady.

Reference material requirements

Use multiple delta‑layer materials with at least three delta‑layers to confirm steady‑state sputtering.
Delta‑layer thickness must be much smaller than the projected range of the primary ions.
Layer spacing must ensure a peak‑to‑valley ratio ≥ 10 between adjacent delta peaks.
Layer thickness, position and interface roughness must be characterized (e.g., TEM, grazing‑incidence XRR, MEIS).
Surface oxide thickness should be comparable to native oxide and must be measured.

Measurement & reproducibility

Measure reference materials and test specimens under the same ion energy and incident angle; predetermined calibration factors can be reused for identical ion‑irradiation conditions.
Ensure more than 20 measurement points per delta‑layer for adequate sampling.
Repeat reference material profiling three times to assess repeatability; check instrument stability (primary‑ion current, scan uniformity) if not reproducible.

Depth determination & calibration

Delta‑layer positions may be defined as local maxima, FWHM center, centroid, or per ISO 20341 procedures - choose the method consistent with specimen data.
The standard provides procedures to determine sputtering rate, depth correction factors, shift distances and uncertainties.

Informative annexes

Annexes cover projected ion ranges (O+), atomic mixing and peak coalescence effects, and uncertainty derivation.

Applications and users

Laboratories performing SIMS depth profiling for semiconductor dopant profiling and near‑surface analysis.

Semiconductor process control and device metrology where accurate nanoscale depth calibration is critical.

Reference‑material producers, instrument manufacturers and calibration/quality‑assurance teams validating SIMS depth scales.

Materials scientists and metrology labs needing standardized procedures to correct sputtering‑induced depth shifts in silicon.

Related standards

ISO 20341 - SIMS method for estimating depth resolution parameters with multiple delta‑layer reference materials.

ISO 18115 - Surface chemical analysis - Vocabulary (terms and definitions referenced).

Keywords: ISO 23812:2009, SIMS depth calibration, secondary‑ion mass spectrometry, silicon depth profiling, delta‑layer reference materials, sputtering rate, shallow region calibration.

ISO 23812:2009

Abstract

Похожие стандарты

Overview

Key topics and requirements

Applications and users

Related standards

Технические детали

BS ISO 20341:2003

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