IEC 62880-1:2017
Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard
Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 24
- Дата публикации:
- 23 августа 2017 г.
- Издание:
- IEC IS 62880 edition 1 version 1
- ICS:
- 31.080.01
IEC 62880-1:2017(E) describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.
Abstract
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