IEC 60749-22-1:2025 PDF
Semiconductor devices - Mechanical and climatic test methods - Part 22-1: Bond strength - Wire bond pull test methods
Semiconductor devices - Mechanical and climatic test methods - Part 22-1: Bond strength - Wire bond pull test methods
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 61
- Дата публикации:
- 26 ноября 2025 г.
- Издание:
- IEC IS 60749 edition 1 version 1
- ICS:
- 31.080.01
IEC 60749-22-1:2025 provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and can be performed on unencapsulated or decapsulated devices. This test method can be performed on gold alloy, copper alloy, and silver alloy thermosonic (ball and stitch) bonds made of wire ranging in diameter from 15 µm to 76 µm (0,000 6" to 0,003"); and on gold alloy, copper alloy, and aluminium alloy ultrasonic (wedge) bonds made of wire ranging in diameter from 18 µm to 600 µm (0,000 7" to 0,024"). This wire bond pull test method is destructive. It is appropriate for use in process development, process control, or quality assurance. This test method allows for two distinct methods of pulling wires: a) One method incorporates the use of a hook that is placed under the wire and is then pulled. b) One method requires that after the wire be cut, a clamp is placed on the wire connected to the bond to be tested, and this clamp is used to pull the wire. This test method does not include bond strength testing using wire bond shear testing. Wire bond shear testing is described in IEC 60749-22-2. This first edition, together with the first edition of IEC 60749-22-2:2025, cancels and replaces the first edition of IEC 60749-22 published in 2002. This edition includes the following significant technical changes with respect to the previous edition: a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749-22-2). This International Standard is to be used in conjunction with IEC 60749-22-2:2025.
Abstract
Overview
IEC 60749-22-1:2025 is a critical international standard from the International Electrotechnical Commission (IEC) detailing mechanical and climatic test methods for semiconductor devices, specifically focusing on wire bond pull test methods to assess bond strength. This standard provides a reliable technique for determining both the strength and failure modes of wire bonds and their interconnects on a die or package bonding surface. It is applicable for testing both unencapsulated and decapsulated semiconductor devices, covering a wide spectrum of wire bond types and configurations.
As technology evolves and new materials are adopted in semiconductor packaging, robust and universally accepted test methods are essential for ensuring product reliability, quality assurance, and consistency across global markets. IEC 60749-22-1:2025 addresses these needs with updated and expanded procedures suitable for modern manufacturing environments.
Key Topics
- Scope of Testing: IEC 60749-22-1:2025 describes destructive testing procedures for bond strength evaluation by wire pull methods. The standard covers both thermosonic (ball and stitch) and ultrasonic (wedge) bonds made with gold, copper, silver, and aluminum alloys.
- Applicable Wire Types and Sizes:
- Thermosonic bonds (gold, copper, silver): 15 µm to 76 µm diameter
- Ultrasonic bonds (gold, copper, aluminum): 18 µm to 600 µm diameter
- Testing Methods:
- Hook Method: A hook is placed under the wire and used to pull until failure.
- Clamp Method: After wire cutting, a clamp attaches to the remaining wire and pulls it.
- Failure Modes and Reporting: The standard provides guidance on defining, identifying, and recording failure modes, including detailed coding for types of wire bond failures.
- Special Applications: Recommendations are included for special cases such as multiloop wires, reverse bonds, security bonds, and complex stacked die assemblies.
- Limitations: This document does not address wire bond shear testing, which is covered separately by IEC 60749-22-2.
Applications
IEC 60749-22-1:2025 is essential in various stages of semiconductor device development and manufacturing:
- Process Development: Used to optimize wire bonding techniques and select materials for improved bond reliability.
- Process Control: Supports manufacturing with routine sample testing to ensure ongoing product quality.
- Quality Assurance: Facilitates incoming and outgoing quality testing, supporting compliance with customer and regulatory requirements.
- Failure Analysis and Reliability: Bond pull test data help identify weak points in device assembly and improve long-term reliability predictions.
- Supplier and OEM Qualification: Provides a common reference for suppliers and manufacturers, ensuring consistency and interoperability across the supply chain.
This standardized approach enables comparison between devices and processes, helps identify material-related risks (such as wire or pad metallization issues), and aligns with industry best practices in device reliability testing.
Related Standards
- IEC 60749-22-2: Focuses on wire bond shear test methods, complementing the pull test procedures in IEC 60749-22-1.
- JEDEC JESD22-B120: A referenced standard upon which many IEC 60749-22-1 methodologies are based.
- MIL-STD-883, Method 2011.9: U.S. military standard containing similar wire bond pull testing procedures, with cross-referenced failure codes for compatibility.
- IEC 60749 Series: Covers a broader range of mechanical and climatic test methods for semiconductor devices.
Adopting IEC 60749-22-1:2025 ensures semiconductor device manufacturers and suppliers maintain high reliability and global competitiveness through internationally harmonized wire bond pull testing procedures. This directly supports improved product quality and customer satisfaction in electronics manufacturing and assembly.
Технические детали
- Технический комитет
- TC 47 - Semiconductor devices
- SKU
- IEC 60749-22-1:2025
Похожие стандарты
Стандарты, упомянутые в описании
IEC 60749-22:2002/COR1:2003
Corrigendum 1 - Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength
BS EN IEC 60749-22-1:2026
ДействующийSemiconductor devices — Mechanical and climatic test methods - Bond strength — wire bond pull test methods
1 Scope This part of IEC 60749 provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and can be…