IEC 60749-24:2025 PDF
Semiconductor devices - Mechanical and climatic test methods - Part 24: Accelerated moisture resistance - Unbiased HAST
Semiconductor devices - Mechanical and climatic test methods - Part 24: Accelerated moisture resistance - Unbiased HAST
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 9
- Дата публикации:
- 27 ноября 2025 г.
- Издание:
- IEC IS 60749 edition 2 version 1
- ICS:
- 31.080.01
IEC 60749-24:2025 specifies unbiased highly accelerated stress testing (HAST). HAST is performed for the purpose of evaluating the reliability of non-hermetically packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under non-condensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. Bias is not applied in this test to ensure that the failure mechanisms potentially overshadowed by bias can be uncovered (e.g. galvanic corrosion). This test is used to identify failure mechanisms internal to the package and is destructive. This edition includes the following significant technical changes with respect to the previous edition: a) rearrangement of clauses to reposition requirements; b) addition of two notes to the post-test electrical procedures.
Abstract
Overview
IEC 60749-24:2025 - "Semiconductor devices - Mechanical and climatic test methods - Part 24: Accelerated moisture resistance - Unbiased HAST" specifies an unbiased Highly Accelerated Stress Test (HAST) for evaluating the moisture sensitivity and reliability of non‑hermetically packaged semiconductor devices in humid, non‑condensing environments. This destructive, highly accelerated moisture resistance method uses elevated temperature and humidity (without electrical bias) to accelerate moisture penetration through encapsulants or along interfaces and to reveal failure mechanisms (for example, galvanic corrosion) that may be masked when bias is applied.
This second edition (2025) updates the 2004 edition, including clause reorganization and additions to post‑test electrical procedures.
Key topics and requirements
- Test purpose: Accelerated moisture resistance evaluation of solid‑state devices in humid, non‑condensing conditions.
- Unbiased HAST specifics: No electrical bias applied - used to uncover failure modes potentially obscured by bias.
- Test conditions (examples from the standard):
- Condition A: 130 ± 2 °C, 85 ± 5 % RH (typical duration ~96 h)
- Condition B: 110 ± 2 °C, 85 ± 5 % RH (typical duration ~264 h)
- Non‑condensing environment and controlled vapor pressure; 85 °C/85 % RH cited as a less accelerated reference.
- Apparatus and records: Chamber capable of holding temperature, RH and pressure; permanent temperature profile records and calibration to avoid condensation.
- Device placement and mounting: DUTs positioned to minimize temperature gradients, ≥30 mm from chamber surfaces, avoid direct radiant heaters; boards oriented to avoid vapor circulation blockage.
- Materials control: Use distilled/deionized water (≥1 MΩ·cm resistivity) and minimize ionic contamination to avoid spurious corrosion.
- Safety and cautions: Moisture lowers polymer glass transition temperature (Tg); stress above effective Tg can create non‑representative failures - exercise caution when selecting temperatures.
- Destructive test: Intended to reveal internal package failure mechanisms; post‑test electrical procedures included.
Applications and users
- Reliability and qualification testing for semiconductor manufacturers, component suppliers, and independent test laboratories.
- Used by reliability engineers, qualification teams, and OEMs designing components for electronics in humid or demanding environments (consumer, industrial, automotive, aerospace), where moisture ingress and internal corrosion are concerns.
- Employed as an alternative or complement to unbiased autoclave testing to accelerate moisture‑related failures.
Related standards
- IEC 60749-5 (steady‑state temperature humidity bias life test)
- IEC 60749-33 (Accelerated moisture resistance - Unbiased autoclave)
- JEDEC JESD22‑A118B.01 (basis for this IEC edition)
Keywords: IEC 60749-24:2025, Unbiased HAST, accelerated moisture resistance, semiconductor humidity testing, non-hermetic packages, reliability testing.
Технические детали
- Технический комитет
- TC 47 - Semiconductor devices
- SKU
- IEC 60749-24:2025
Похожие стандарты
Упомянутые в описании и другие стандарты IEC
IEC 60749-5:2023
ДействующийSemiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias…
Overview IEC 60749-5:2023 - "Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady‑state temperature humidity bias life test" specifies a destructive, steady‑state temperature…
IEC 60749-33:2004
ДействующийSemiconductor devices - Mechanical and climatic test methods - Part 33: Accelerated moisture resistance - Unb…
Overview IEC 60749-33:2004 defines the unbiased autoclave method for accelerated moisture-resistance testing of non-hermetic semiconductor packages. The test uses a condensing, high-humidity, elevate…
IEC 60050-161:1990/AMD2:1998
ДействующийAmendment 2 - International Electrotechnical Vocabulary (IEV) - Part 161: Electromagnetic compatibility
IEC 60050-161:1990/AMD2:1998 – Electromagnetic Compatibility Vocabulary Amendment ### Overview The IEC 60050-161:1990/AMD2:1998 is the second amendment to the International Electrotechnical Vocabular…