IEC 62047-34:2019 PDF

Name: IEC 62047-34:2019 — Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer
SKU: IEC 62047-34:2019
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Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer

Название (английский):

IEC 62047-34:2019

Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer

Статус документа:: Действующий
Формат:: Электронный (PDF)
Количество страниц:: 16
Дата публикации:: 5 апреля 2019 г.
Издание:: IEC IS 62047 edition 1 version 1
ICS:: 31.080.99

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Описание (английский):

IEC 62047-34:2019 (E) describes test conditions and test methods of electric character, static performances and thermal performances for MEMS pressure-sensitive devices. This document applies to test for both open and closed loop piezoresistive MEMS pressure devices on wafer.

Abstract

Похожие стандарты

Упомянутые в описании и другие стандарты IEC

Overview

IEC 62047-34:2019 - "Semiconductor devices - Micro‑electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure‑sensitive device on wafer" - specifies test conditions and standardized test methods for electrical characteristics, static performances and thermal performances of piezoresistive MEMS pressure‑sensitive devices at wafer level. The standard covers both open‑loop and closed‑loop Wheatstone‑bridge device implementations and defines the environmental, instrumentation and sampling requirements for reliable wafer‑level measurement.

Key topics and technical requirements

Scope: Wafer‑level test methods for piezoresistive pressure sensors (open and closed loop).

Test conditions:

Standard atmospheric testing range: 15 °C–35 °C, 20 %–80 % RH, 86 kPa–106 kPa.
Standard reference conditions: 20 °C, 65 % RH, 101.3 kPa (used for corrections).
Electromagnetic and vibration requirements: avoid external fields and mechanical vibration (device‑specific allowances possible).

Test system components: probe station, pressure control device, heating/cooling system, excitation power supply, reading/recording instruments.

Instrumentation tolerances:

Pressure controller intrinsic error ≤ 1/3 of device intrinsic error bound.
Temperature measurement accuracy: ±2 °C around setpoint.
Excitation and readout fluctuation/ error bounds: ≤ 1/5 of device intrinsic error bound.

General provisions: requirement for valid metrological verification certificates and recommended preheating per instrument manuals.

Resistance measurements:

Procedures for closed‑loop (measure opposite bridge leg resistances) and open‑loop (measure adjacent leg resistances).

Static performance tests (five‑point wafer sampling recommended; sampling plan per IEC 61193‑2):

Zero output, output under normal pressure, full‑scale span, nonlinearity, hysteresis, repeatability, accuracy, sensitivity, zero drift.

Thermal performance: test methods and conditions for evaluating temperature‑dependent behavior and drift (thermal test procedures and acceptance criteria are defined in the standard).

Applications and practical value

Wafer‑level qualification and acceptance testing of MEMS piezoresistive pressure sensors.

Production process control, yield monitoring and device characterization in MEMS fabs.

R&D and sensor design validation to quantify static and thermal behavior.

Calibration and metrology labs implementing standardized wafer probe tests.

Related standards

IEC 61193‑2 (sampling plans for electronic components)

IEC 60747‑14‑3 (semiconductor pressure sensor terminology and related requirements)

Keywords: IEC 62047-34:2019, MEMS piezoresistive pressure-sensitive device, test methods, wafer-level testing, static performance, thermal performance, probe station, five-point sampling.

IEC 62047-34:2019 PDF

Abstract

Похожие стандарты

Overview

Key topics and technical requirements

Applications and practical value

Who uses this standard

Related standards

Технические детали

IEC 61193-2:2007

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