IEC 62374-1:2010 PDF
Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 32
- Дата публикации:
- 29 сентября 2010 г.
- Издание:
- IEC IS 62374 edition 1 version 1
- ICS:
- 31.080.99
IEC 62374-1:2010 describes a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.
Abstract
Overview
IEC 62374-1:2010 is an international standard developed by the International Electrotechnical Commission (IEC) that specifies the testing methodology for evaluating the reliability of inter-metal dielectric layers used in semiconductor devices. This part of the series focuses on the Time-Dependent Dielectric Breakdown (TDDB) test, detailing the test methods, test structures, and lifetime estimation techniques applicable to inter-metal dielectric layers. TDDB testing is crucial for assessing the long-term performance and durability of dielectric materials under electrical stress, helping semiconductor manufacturers ensure product reliability.
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