IEC 62415:2010 PDF
Semiconductor devices - Constant current electromigration test
Semiconductor devices - Constant current electromigration test
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 22
- Дата публикации:
- 19 мая 2010 г.
- Издание:
- IEC IS 62415 edition 1 version 1
- ICS:
- 31.080.01
IEC 62415:2010 describes a method for conventional constant current electromigration testing of metal lines, via string and contacts.
Abstract
Overview
IEC 62415:2010 is an international standard established by the International Electrotechnical Commission (IEC) that specifies a method for constant current electromigration testing in semiconductor devices. This standard focuses on evaluating the reliability of metal interconnects, via chains, and contacts within semiconductor circuits by applying a constant current stress test. Electromigration, the movement of metal atoms caused by high current density, can lead to open or short circuits, affecting device performance and longevity. IEC 62415:2010 provides a structured approach to assess electromigration failure mechanisms under accelerated test conditions.
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