IEC 62416:2010 PDF
Semiconductor devices - Hot carrier test on MOS transistors
Semiconductor devices - Hot carrier test on MOS transistors
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 20
- Дата публикации:
- 26 апреля 2010 г.
- Издание:
- IEC IS 62416 edition 1 version 1
- ICS:
- 31.080.30
IEC 62416:2010 describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.
Abstract
Overview
IEC 62416:2010 is an international standard published by the International Electrotechnical Commission (IEC) that specifies the . This standard focuses specifically on wafer-level testing of NMOS and PMOS transistors to evaluate their within a particular (C)MOS process. Its primary goal is to ensure that individual transistors meet required reliability thresholds against hot carrier degradation-a critical reliability concern for semiconductor devices.
Похожие стандарты
Упомянутые в описании и другие стандарты IEC