IEC 62418:2010 PDF
Semiconductor devices - Metallization stress void test
Semiconductor devices - Metallization stress void test
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 34
- Дата публикации:
- 22 апреля 2010 г.
- Издание:
- IEC IS 62418 edition 1 version 1
- ICS:
- 31.080.01
IEC 62418:2010 describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization.
Abstract
Overview
IEC 62418:2010 is an international standard established by the International Electrotechnical Commission (IEC) that specifies a method for conducting metallization stress void tests on semiconductor devices. This test is primarily used for aluminum (Al) and copper (Cu) metallization layers found in semiconductor manufacturing. The standard outlines procedures, test structures, equipment, stress conditions, and evaluation criteria to assess the reliability and qualification of metallization processes. The focus is on detecting void formation caused by stress migration, which can impact device performance and longevity.
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