IEC 63068-1:2019 PDF

Name: IEC 63068-1:2019 — Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
SKU: IEC 63068-1:2019
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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

Название (английский):

IEC 63068-1:2019

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

Статус документа:: Действующий
Формат:: Электронный (PDF)
Количество страниц:: 23
Дата публикации:: 30 января 2019 г.
Издание:: IEC IS 63068 edition 1 version 1
ICS:: 31.080.99

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Описание (английский):

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

Abstract

Похожие стандарты

Стандарты, упомянутые в описании

Overview

IEC 63068-1:2019 - "Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects" - defines a consistent classification scheme for defects observed in as-grown 4H‑SiC homoepitaxial layers. The standard classifies defects by their crystallographic structure and documents how they are recognized using non‑destructive imaging: bright‑field optical microscopy (OM), photoluminescence (PL), and X‑ray topography (XRT) images. Part 1 provides the common vocabulary and visual reference needed for wafer quality assessment in SiC power device manufacturing.

Key topics and technical scope

Defect classification for as‑grown 4H‑SiC epitaxial layers based on crystallography.

Non‑destructive recognition methods specified as:

Bright‑field OM (optical microscopy)
PL (photoluminescence) imaging
XRT (X‑ray topography)

Comprehensive listing of defect classes (illustrated and described), including:

Point defect
Micropipe
TSD (threading screw dislocation)
TED (threading edge dislocation)
BPD (basal plane dislocation)
Scratch trace
Stacking fault and propagated stacking fault
Stacking fault complex
Polytype inclusion
Particle inclusion and surface particle
Bunched‑step segment and other surface/extended defects

Definitions and terms for SiC crystallography (4H, polytypism, basal/prism planes, c‑axis) to ensure consistent interpretation.

Practical applications

Establishes a standardized framework for wafer inspection, enabling consistent defect identification across suppliers and fabs.

Supports yield improvement and reliability analysis for SiC power devices by providing standardized defect categories and visual examples.

Useful for development of automated optical inspection (AOI) and PL imaging algorithms by supplying labeled defect taxonomy for training and benchmarking.

Aids failure analysis labs, quality assurance teams, and process engineers in correlating defect types with device performance and processing steps.

Who should use this standard

SiC wafer manufacturers and epitaxy process engineers

Power semiconductor device makers and reliability engineers

Inspection equipment vendors and AOI/PL system integrators

Failure analysis and materials characterization laboratories

Standards and quality managers working on semiconductor qualification

Related standards

IEC 63068-2 - Test method for defects using optical inspection (planned in series)

IEC 63068-3 - Test method for defects using photoluminescence (planned in series)

Keywords: IEC 63068-1, 4H‑SiC, silicon carbide, homoepitaxial wafer, defect classification, non‑destructive recognition, optical microscopy, photoluminescence, X‑ray topography, SiC power devices, wafer inspection.

IEC 63068-1:2019 PDF

Abstract

Похожие стандарты

Overview

Key topics and technical scope

Practical applications

Who should use this standard

Related standards

Технические детали

BS IEC 63068-2:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer…

BS IEC 63068-3:2020

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer…

BS IEC 63068-1:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer…