IEC TS 62607-6-7:2023 PDF

Overview

IEC TS 62607-6-7:2023 - Nanomanufacturing: Graphene - Sheet resistance: van der Pauw method defines a standardized procedure to measure the sheet resistance (RS, in ohm per square Ω/sq) of graphene using the van der Pauw (vdP) technique. The Technical Specification covers four‑terminal resistance measurements made with four electrical contacts on the sample perimeter, the calculation of RS from two resistance measurements, and guidance on uncertainty evaluation and sample non‑uniformity. The method applies to CVD graphene transferred to insulating substrates (quartz, SiO2 on Si) and graphene grown on silicon carbide, with an effective measurement range from 10−2 Ω/sq to 10^4 Ω/sq.

Key Topics

• Measurement principle: Four‑terminal vdP measurements (two resistance configurations) with contacts on the sample boundary and mathematical computation of RS.
• Measurement range: Valid for RS between 10−2 and 10^4 Ω/sq.
• Sample applicability: CVD graphene on quartz or other insulating supports, and graphene from silicon carbide.
• Contact independence & uniformity: vdP is independent of contact position for uniform samples; the standard addresses realistic graphene inhomogeneity and recommends treating non‑uniformity as an uncertainty component.
• Measurement procedure: Protocols for contact placement, instrument calibration, measurement settings, and recording of environmental conditions (temperature, relative humidity).
• Uncertainty and data analysis: Methods to compute RS, apply corrections, and express combined uncertainty including sample inhomogeneity.
• Practical considerations: Avoiding sample damage (e.g., versus in‑line four‑point‑probe 4PP), use of commercial vdP fixtures, and recommended reporting of results.

Applications / Who Should Use It

This Technical Specification is aimed at laboratories and organizations involved in graphene metrology, quality control, and device fabrication:

• Nanomanufacturers and process engineers validating sheet resistance of CVD or SiC graphene films.
• R&D teams developing graphene‑based electronics, sensors, and transparent conductors.
• Test and calibration labs establishing traceable RS measurements and uncertainty budgets.
• Quality assurance in roll‑to‑roll production where non‑destructive edge contact measurement is preferred to 4PP. Using IEC TS 62607-6-7:2023 helps ensure reproducible, comparable RS data for product specifications and process control.

Related Standards

• IEC TS 62607-6-8 (in‑line four‑point‑probe method) - complementary method for sheet resistance measurement.
• Annex C of IEC TS 62607-6-7 lists additional standards and references relevant to sheet resistance metrology and measurement best practices.

Keywords: IEC TS 62607-6-7:2023, van der Pauw, sheet resistance, RS, graphene, CVD graphene, four‑terminal, Ω/sq, SiO2 on Si, silicon carbide, 4PP, measurement uncertainty.