IEC TS 62876-3-4:2025 PDF

Nanomanufacturing - Reliability assessment - Part 3-4: Linearity of output characteristics for metal contacted 2D semiconductor devices

Название (английский):

IEC TS 62876-3-4:2025

Nanomanufacturing - Reliability assessment - Part 3-4: Linearity of output characteristics for metal contacted 2D semiconductor devices

Статус документа:: Действующий
Формат:: Электронный (PDF)
Количество страниц:: 24
Дата публикации:: 16 декабря 2025 г.
Издание:: IEC TS 62876 edition 1 version 1
ICS:: 07.120

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Описание (английский):

IEC TS 62876-3-4:2025, which is a Technical Specification, establishes a standardized guideline to assess • reliability of metallic interfaces of Ohmic-contacted field-effect transistors (FETs) using 2D nano-materials by quantifying • linearity of current-voltage (I-V) output curves for devices with various materials combinations of van der Waals (vdW) interfaces. For metallic interfaces with 2D materials (eg. graphene, MoS2, MoTe2, WS2, WSe2, etc) and metals (eg. Ti, Cr, Au, Pd, In, Sb, etc), the reliability of Ohmic contact is quantified. For FETs consisting of 2D materials-based channels (eg. MoS2, MoTe2, WS2, WSe2, etc), the reliability of Ohmic contact when varying contacting metal, channel length, channel thickness, applied voltage, and surface treatment condition is quantified. The reliability of the metallic contacts is quantified from the linearity of I-V characteristics measured over extended time periods.

Технические детали

Технический комитет: TC 113 - Nanotechnology for electrotechnical products and systems
SKU: IEC TS 62876-3-4:2025

Abstract

Overview

IEC TS 62876-3-4:2025 is a Technical Specification in the IEC 62876 nanomanufacturing series that defines a standardized method to assess the reliability of metallic contacts in field‑effect transistors (FETs) built from 2D semiconductor materials. The document quantifies reliability by measuring and analysing the linearity of current–voltage (I–V) output characteristics for metal‑contacted 2D devices (e.g., MoS2, WSe2, WS2, MoTe2, graphene) with a range of metals (e.g., Ti, Cr, Au, Pd, In, Sb). Measurements are required over extended time periods to capture contact stability and degradation.

Key topics and technical requirements

Scope and definitions: Terms for sample geometry, contacts (bottom, edge), and test conditions specific to 2D FETs and van der Waals (vdW) interfaces.
Sample preparation: Recommended device structures, fabrication approaches and surface treatments (e.g., methods used to induce ohmic-like transport are illustrated in informative annexes).
Measurement procedure:
- Required measurement equipment and calibration steps.
- Protocol for collecting output I–V curves (drain current vs drain voltage at varying gate voltages).
- Consideration of channel length, channel thickness, applied voltages and contact type.
Data analysis and interpretation:
- Quantification of I–V linearity to distinguish Ohmic-like vs Schottky (non‑Ohmic) behaviour.
- Guidance on deriving contact reliability metrics from I–V linearity and time‑dependent datasets.
- Figures and derivative-based methods to identify current saturation and contact-limited conduction.
Informative worked examples: Annexes present case studies (bottom‑contacted WSe2, edge‑contacted MoS2, WS2 with current saturation) illustrating reporting and analysis.
Supporting tables and figures: e.g., allowed channel lengths for given contact‑resistance limits and schematic I–V examples.

Applications and users

This Technical Specification is practical for:

Semiconductor researchers and device engineers developing 2D-material FETs.
Materials scientists and process engineers evaluating metal–2D interfaces, contact metallurgy, and surface treatments.
Reliability engineers and test labs establishing standardized I–V testing and long‑term contact stability protocols.
Foundries and nanomanufacturing developers integrating 2D devices into electronic subsystems.

Use cases include validating Ohmic contact formation, comparing contacting metals and surface treatments, optimizing channel geometry for low contact resistance, and producing reproducible reliability data for device qualification.

Related standards

Part of the IEC 62876 series: other parts address broader nanomanufacturing reliability topics (refer to IEC catalogue for related parts).
Referenced measurement and calibration standards are listed in the normative references of the TS.

Keywords: IEC TS 62876-3-4:2025, nanomanufacturing, reliability assessment, 2D semiconductor devices, I–V linearity, Ohmic contact, van der Waals interface, contact resistance, FET measurement.

Overview

Key topics and technical requirements

Scope and definitions: Terms for sample geometry, contacts (bottom, edge), and test conditions specific to 2D FETs and van der Waals (vdW) interfaces.
Sample preparation: Recommended device structures, fabrication approaches and surface treatments (e.g., methods used to induce ohmic-like transport are illustrated in informative annexes).
Measurement procedure:
- Required measurement equipment and calibration steps.
- Protocol for collecting output I–V curves (drain current vs drain voltage at varying gate voltages).
- Consideration of channel length, channel thickness, applied voltages and contact type.
Data analysis and interpretation:
- Quantification of I–V linearity to distinguish Ohmic-like vs Schottky (non‑Ohmic) behaviour.
- Guidance on deriving contact reliability metrics from I–V linearity and time‑dependent datasets.
- Figures and derivative-based methods to identify current saturation and contact-limited conduction.
Informative worked examples: Annexes present case studies (bottom‑contacted WSe2, edge‑contacted MoS2, WS2 with current saturation) illustrating reporting and analysis.
Supporting tables and figures: e.g., allowed channel lengths for given contact‑resistance limits and schematic I–V examples.

Applications and users

This Technical Specification is practical for:

Semiconductor researchers and device engineers developing 2D-material FETs.
Materials scientists and process engineers evaluating metal–2D interfaces, contact metallurgy, and surface treatments.
Reliability engineers and test labs establishing standardized I–V testing and long‑term contact stability protocols.
Foundries and nanomanufacturing developers integrating 2D devices into electronic subsystems.

Related standards

Part of the IEC 62876 series: other parts address broader nanomanufacturing reliability topics (refer to IEC catalogue for related parts).
Referenced measurement and calibration standards are listed in the normative references of the TS.

Keywords: IEC TS 62876-3-4:2025, nanomanufacturing, reliability assessment, 2D semiconductor devices, I–V linearity, Ohmic contact, van der Waals interface, contact resistance, FET measurement.

IEC TS 62876-3-4:2025 PDF

Технические детали

Abstract

Overview

Key topics and technical requirements

Applications and users

Related standards

Похожие стандарты

Abstract

Overview

Key topics and technical requirements

Applications and users

Related standards

Похожие стандарты

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