ISO 14706:2014 PDF
Surface chemical analysis — Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
Surface chemical analysis — Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 25
- Дата публикации:
- 25 июля 2014 г.
- Издание:
- ISO IS 14706 edition 2 version 1
- ICS:
- 71.040.40
ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.
Abstract
Overview
ISO 14706:2014 specifies a standardized TXRF (total‑reflection X‑ray fluorescence) method for quantifying surface elemental contamination on silicon wafers. The method targets chemomechanically polished or epitaxial wafer surfaces and is intended for trace elemental analysis using TXRF spectroscopy. Key performance ranges include elements with atomic numbers Z = 16 (S) to 92 (U) and atomic surface densities down to the low 10^10 atoms/cm² range (and down to ~5×10^8 atoms/cm² when using the VPD - vapour‑phase decomposition - specimen preparation method).
Key topics and technical requirements
- Analytical principle: TXRF uses total reflection to limit X‑ray penetration depth, improving surface sensitivity (typical probing depth for film‑type contamination is
Технические детали
- Технический комитет
- ISO/TC 201 - Surface chemical analysis
- SKU
- ISO 14706:2014
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