ISO 20341:2003 PDF

Name: ISO 20341:2003 — Surface chemical analysis — Secondary-ion mass spectrometry — Method for estimating depth resolution parameters with multiple delta-layer reference materials
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Surface chemical analysis — Secondary-ion mass spectrometry — Method for estimating depth resolution parameters with multiple delta-layer reference materials

Название (английский):

ISO 20341:2003

Surface chemical analysis — Secondary-ion mass spectrometry — Method for estimating depth resolution parameters with multiple delta-layer reference materials

Статус документа:: Действующий
Формат:: Электронный (PDF)
Количество страниц:: 5
Дата публикации:: 24 июля 2003 г.
Издание:: ISO IS 20341 edition 1 version 1
ICS:: 71.040.40

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Описание (английский):

ISO 20341:2003 specifies procedures for estimating three depth resolution parameters, viz the leading-edge decay length, the trailing-edge decay length and the Gaussian broadening, in SIMS depth profiling using multiple delta-layer reference materials. It is not applicable to delta-layers where the chemical and physical state of the near-surface region, modified by the incident primary ions, is not in the steady state.

Abstract

Похожие стандарты

Упомянутые в описании и другие стандарты ISO

Overview

ISO 20341:2003 specifies a standardized method for estimating depth resolution parameters in Secondary‑Ion Mass Spectrometry (SIMS) depth profiling using multiple delta‑layer reference materials. The standard defines procedures to quantify the three component parameters that describe a SIMS depth profile: the leading‑edge decay length, the trailing‑edge decay length, and the Gaussian broadening. It is intended for situations where the near‑surface region is in a steady state under primary‑ion bombardment and therefore does not apply to non‑steady‑state delta layers.

Key topics and requirements

Depth resolution parameters: Procedures for estimating

Leading‑edge decay length (λL)
Trailing‑edge decay length (λT)
Gaussian broadening (σ)

Reference materials: Requirements for multiple delta‑layer samples:

Matrix must remain constant during sputtering (constant matrix signals).
Flat, parallel delta layers and surface to avoid profile distortion.
Delta‑layer thickness much less than primary‑ion projected range.
Layer spacing such that valley intensity < 1% of peak.
Characterisation of layer thickness, position and interface roughness by cross‑section TEM, grazing incidence X‑ray reflectivity, MEIS, or equivalent.

Measurement procedures:

Instrument setup per manufacturer/local procedures (ion species, energy, current, polarity, scan uniformity).
Acquire profiles with >10 data points in the top 20% of peak intensity and record down to <1% of maximum.
Subtract constant background if >1% of peak before fitting; convert sputter time to depth.
Full estimation: use non‑linear curve fitting of a convolution model (see Equation (4) in the standard) to extract λL, λT and σ.
Simpler options (Annex A): one‑ or two‑parameter estimates using semi‑log slopes of intensity vs. depth (require linear span of at least a factor 10 in intensity).

Reporting: Test report must identify specimen, instrument, analysis conditions, reference material, method used (Equation (4) or Annex A), measured parameters for each layer, depths, and any deviations or unusual features.

Applications and users

ISO 20341:2003 is directly applicable to laboratories and professionals performing SIMS depth profiling, including:

Surface analysis and materials characterization labs

Semiconductor and thin‑film process development teams

Quality control laboratories using delta‑layer reference materials

Instrument manufacturers and calibration services

Academic researchers studying interfaces, diffusion, ion‑beam mixing or sputter‑induced effects

This standard helps ensure reproducible, comparable measurements of SIMS depth resolution for device interfaces, dopant profiling, multilayer films and other nanoscale depth analyses.

ISO 20341:2003 PDF

Abstract

Похожие стандарты

Overview

Key topics and requirements

Applications and users

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