ISO 23812:2009 PDF
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 19
- Дата публикации:
- 8 апреля 2009 г.
- Издание:
- ISO IS 23812 edition 1 version 1
- ICS:
- 71.040.40
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials. It is not applicable to the surface-transient region where the sputtering rate is not in the steady state. It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
Abstract
Overview
ISO 23812:2009 specifies a standardized procedure to calibrate the depth scale in shallow-region SIMS (Secondary‑Ion Mass Spectrometry) depth profiling of silicon using multiple delta‑layer reference materials. The method targets depths less than 50 nm, is not intended for the surface‑transient (non‑steady sputtering) region, and applies to single‑crystalline, polycrystalline and amorphous silicon. The standard helps correct depth shifts caused by transient sputtering‑rate changes during the initial stages of ion bombardment.
Key topics and requirements
- Scope and applicability
- Calibrates the depth scale in the near‑surface region (
Технические детали
- Технический комитет
- ISO/TC 201/SC 6 - Secondary ion mass spectrometry
- SKU
- ISO 23812:2009
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