ISO/TR 22335:2007 PDF
Surface chemical analysis — Depth profiling — Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer
Surface chemical analysis — Depth profiling — Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 18
- Дата публикации:
- 2 июля 2007 г.
- Издание:
- ISO TR 22335 edition 1 version 1
- ICS:
- 71.040.40
ISO/TR 22335:2007 describes a method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X‑ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm2 and 3,0 mm2. The Technical Report is applicable only to a laterally homogeneous bulk or single-layered material where the ion-sputtering rate is determined from the sputtered depth, as measured by a mechanical stylus profilometer, and sputtering time. The Technical Report provides a method to convert the ion-sputtering time scale to sputtered depth in a depth profile by assuming a constant sputtering velocity. This method has not been designed for, or tested using, a scanning probe microscope system. It is not applicable to the case where the sputtered area is less than 0,4 mm2 or where the sputter-induced surface roughness is significant compared with the sputtered depth to be measured.
Abstract
Overview
ISO/TR 22335:2007 - Surface chemical analysis - Depth profiling - Measurement of sputtering rate: mesh‑replica method using a mechanical stylus profilometer - is a Technical Report from ISO/TC 201 that describes an experimental procedure to determine ion-sputtering rates used to convert sputtering time to sputtered depth in depth profiling by Auger electron spectroscopy (AES) and X‑ray photoelectron spectroscopy (XPS). The method forms a replica pattern by ion-sputtering a specimen through a grid mesh (recommended 75 lines per inch) and measures the resulting crater depth with a mechanical stylus profilometer. The sputtering rate R is calculated as R = d / t (sputtered depth divided by sputtering time).
Key topics and requirements
- Scope and applicability
- Applicable to ion-sputtered areas between 0.4 mm² and 3.0 mm².
- Intended for laterally homogeneous bulk or single-layered materials.
- Not designed or tested for scanning probe microscopes (SPM) and not applicable when sputtered area
Технические детали
- Технический комитет
- ISO/TC 201/SC 4 - Depth profiling
- SKU
- ISO/TR 22335:2007
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