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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafe…

Overview IEC 63068-4:2022 defines a non-destructive, reproducible procedure for identifying and evaluating defects in as-grown 4H‑SiC homoepitaxial wafers used for power devices. The standard prescri…

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer…