BS EN IEC 60749-34-1:2025
Semiconductor devices. Mechanical and climatic test methods - Power cycling test for power semiconductor module
Semiconductor devices. Mechanical and climatic test methods - Power cycling test for power semiconductor module
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Дата публикации:
- 31 августа 2025 г.
- ICS:
- 31.080.01
- SKU:
- BS EN IEC 60749-34-1:2025
Abstract
1 Scope This part of IEC 60749 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749‑34 , but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor. If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document. This test causes wear-out and is considered destructive.
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