BS IEC 63068-1:2019
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Classification of defects
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Classification of defects
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Дата публикации:
- 31 мая 2019 г.
- ICS:
- 31.080.99
- SKU:
- BS IEC 63068-1:2019
Abstract
What is BS IEC 63068-1 - Silicon carbide homoepitaxial wafer about?
BS IEC 63068-1 is the first part of an international standard used for semiconductor devices that helps in classifying the defects in silicon carbide homoepitaxial. By using BS IEC 63068-1 you can manufacture good quality semiconductor devices.
BS IEC 63068-1 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
Who is BS IEC 63068-1 - Silicon carbide homoepitaxial wafer for?
BS IEC 63068-1 on non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer useful for: <span data-ccp-props='{"134233279":true,"201341983":0,"3355...
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