IEC 63068-1:2019

Overview

IEC 63068-1:2019 - "Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects" - defines a consistent classification scheme for defects observed in as-grown 4H‑SiC homoepitaxial layers. The standard classifies defects by their crystallographic structure and documents how they are recognized using non‑destructive imaging: bright‑field optical microscopy (OM), photoluminescence (PL), and X‑ray topography (XRT) images. Part 1 provides the common vocabulary and visual reference needed for wafer quality assessment in SiC power device manufacturing.

Key topics and technical scope

• Defect classification for as‑grown 4H‑SiC epitaxial layers based on crystallography.
• Non‑destructive recognition methods specified as:
  • Bright‑field OM (optical microscopy)
  • PL (photoluminescence) imaging
  • XRT (X‑ray topography)
• Comprehensive listing of defect classes (illustrated and described), including:
  • Point defect
  • Micropipe
  • TSD (threading screw dislocation)
  • TED (threading edge dislocation)
  • BPD (basal plane dislocation)
  • Scratch trace
  • Stacking fault and propagated stacking fault
  • Stacking fault complex
  • Polytype inclusion
  • Particle inclusion and surface particle
  • Bunched‑step segment and other surface/extended defects
• Definitions and terms for SiC crystallography (4H, polytypism, basal/prism planes, c‑axis) to ensure consistent interpretation.

Practical applications

• Establishes a standardized framework for wafer inspection, enabling consistent defect identification across suppliers and fabs.
• Supports yield improvement and reliability analysis for SiC power devices by providing standardized defect categories and visual examples.
• Useful for development of automated optical inspection (AOI) and PL imaging algorithms by supplying labeled defect taxonomy for training and benchmarking.
• Aids failure analysis labs, quality assurance teams, and process engineers in correlating defect types with device performance and processing steps.

Who should use this standard

• SiC wafer manufacturers and epitaxy process engineers
• Power semiconductor device makers and reliability engineers
• Inspection equipment vendors and AOI/PL system integrators
• Failure analysis and materials characterization laboratories
• Standards and quality managers working on semiconductor qualification

Related standards

• IEC 63068-2 - Test method for defects using optical inspection (planned in series)
• IEC 63068-3 - Test method for defects using photoluminescence (planned in series)

Keywords: IEC 63068-1, 4H‑SiC, silicon carbide, homoepitaxial wafer, defect classification, non‑destructive recognition, optical microscopy, photoluminescence, X‑ray topography, SiC power devices, wafer inspection.