IEC 60747-7:2010
Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 418
- Дата публикации:
- 23 сентября 2019 г.
- Издание:
- IEC IS 60747 edition 3 version 1
- ICS:
- 31.080.30
IEC 60747-7:2010 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors. - Small signal transistors (excluding switching and microwave applications); - Linear power transistors (excluding switching, high-frequency, and microwave applications); - High-frequency power transistors for amplifier and oscillator applications; - Switching transistors for high speed switching and power switching applications; - Resistor biased transistors. The main changes with respect to previous edition are listed below. a) Clause 1 was amended by adding an item that should be included. b) Clauses 3, 4, 5, 6 and 7 were amended by adding terms, definitions, suitable additions and deletions those should be included. c) The text of the second edition was combined with that of IEC 60747-7-5. This publication is to be read in conjunction with IEC 60747-1:2006.
Abstract
Overview
IEC 60747-7:2010 is an international standard issued by the International Electrotechnical Commission (IEC) that defines the requirements and testing methods for bipolar transistors used as discrete semiconductor devices. This part of the IEC 60747 series specifically addresses various sub-categories of bipolar transistors, excluding microwave transistors, and provides detailed specifications essential to manufacturers, designers, and quality control engineers in the semiconductor industry.
This standard covers key bipolar transistor types including:
- Small signal transistors (excluding switching and microwave applications)
- Linear power transistors (excluding switching, high-frequency, and microwave applications)
- High-frequency power transistors for amplifier and oscillator applications
- Switching transistors for high-speed switching and power switching applications
- Resistor biased transistors
IEC 60747-7:2010 integrates amendments and consolidates previous editions including IEC 60747-7-5, ensuring comprehensive and up-to-date guidance consistent with IEC 60747-1:2006 general requirements.
Key Topics
Bipolar Transistor Categories and Characteristics
- Detailed definitions and functional regions of bipolar transistors
- Essential electrical parameters and letter symbols associated with bipolar transistor ratings and characteristics
- Specifications for each transistor category covering ratings (limiting values) and electrical characteristics such as voltages, currents, power limits, switching parameters, and frequency parameters
Measurement and Testing Methods
- Standardized procedures for measuring key parameters including:
- Collector, base, and emitter currents
- Voltage ratings (collector-base, collector-emitter, emitter-base)
- Safe operating area (SOA) verification
- Switching time and energy measurements under inductive and resistive load conditions
- Thermal resistance and noise characteristics
- Verification and acceptance criteria to ensure compliance with the standard and guarantee device reliability
Reliability and Endurance Testing
- Requirements and methods for endurance testing such as high temperature blocking (HTRB) and intermittent operating life tests
- Acceptance criteria for reliability, including type and routine testing protocols
- Guidelines for ensuring the durability and long-term operational stability of bipolar transistors in real-world applications
Resistor Biased Transistors
- Specific definitions, graphical symbols, ratings, characteristics, and testing methods uniquely applicable to resistor biased bipolar transistors
Applications
IEC 60747-7:2010 serves as an indispensable reference for industries and fields reliant on bipolar transistors including:
- Consumer electronics where small signal transistors are used for amplification and switching in devices
- Power management systems employing linear and switching power transistors for voltage regulation and amplification
- High-frequency communication technologies utilizing high-frequency power transistors in amplifier and oscillator circuits
- Industrial automation and control leveraging switching transistors for high-speed signal processing
- Semiconductor quality assurance ensuring that manufactured bipolar transistors meet rigorous international standards through reliable testing and measurement methods
By adhering to this standard, manufacturers ensure product interoperability, reliable performance, and safety across global markets, while design engineers benefit from consistent terminology and parameter definitions.
Related Standards
- IEC 60747-1:2006 – Semiconductor devices – Part 1: General requirements; serves as the foundational standard referenced alongside IEC 60747-7 for overarching principles and terminology
- Additional parts of IEC 60747 series covering other discrete semiconductor devices like diodes and field-effect transistors
- Complementary IEC publications on electrotechnical terminology such as Electropedia and IEC glossary for standardized terms and definitions in semiconductor technology
Keywords: IEC 60747-7, bipolar transistors standard, semiconductor devices, discrete devices, small signal transistors, power transistors, switching transistors, high-frequency transistors, resistor biased transistors, transistor ratings, transistor characteristics, measurement methods, reliability testing, safe operating area, IEC standards bipolar transistors
Технические детали
- Технический комитет
- SC 47E - Discrete semiconductor devices
- SKU
- IEC 60747-7:2010
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