IEC 60747-8:2010

Overview

IEC 60747-8:2010 (consolidated with AMD1:2021) is the International Electrotechnical Commission standard that specifies definitions, ratings, characteristics and test methods for discrete field-effect transistors (FETs). It covers three device categories:

• Type A: junction-gate (JFET)
• Type B: insulated‑gate depletion (normally on)
• Type C: insulated‑gate enhancement (normally off, e.g., MOSFET)

This part is intended to be read in conjunction with IEC 60747-1:2006 (general semiconductor device requirements) and provides detailed, harmonized rules for datasheet parameters, measurement procedures and reliability testing.

Key topics and technical requirements

The standard organizes technical content into practical sections that include:

• Terms and letter symbols: standardized terminology and symbol lists for voltages, currents, powers and small‑signal parameters to ensure consistent datasheets and test reports.
• Essential ratings and characteristics: definitions and limits for temperatures, voltages, currents, power dissipation, safe operating area (SOA) and device categories (single‑gate, multiple‑gate).
• Electrical characteristics measured: breakdown voltage, gate‑source threshold/off voltage, drain leakage/cut‑off current, RDS(on) (on‑state resistance), switching times (td(on), tr, td(off), tf), gate charge (Qg, Qgd, Qgs), capacitances (Ciss, Coss, Crss), transconductance, noise and forward recovery metrics.
• Measuring methods and test circuits: standardized circuits and waveforms for verifying ratings (e.g., FBSOA/RBSOA), avalanche energy, switching energy, gate charge and thermal impedance.
• Thermal and reliability tests: channel‑case transient thermal impedance, thermal resistance, high‑temperature blocking, high‑temperature gate bias and intermittent operating life tests.
• Acceptance and reliability criteria: type and routine tests, endurance and failure‑mode considerations for manufacturing and qualification.

Applications and who uses this standard

IEC 60747-8 is used by:

• Semiconductor manufacturers for defining device specifications, characterizing FETs and preparing compliant datasheets.
• Test laboratories and QA teams to implement repeatable measurement procedures and acceptance testing.
• Power electronics and analog circuit designers who need reliable parameter definitions (RDS(on), SOA, gate charge, capacitances) to select and model FETs.
• Procurement and compliance engineers ensuring parts meet international test and reliability expectations for automotive, industrial and consumer electronics.

Benefits include consistent device characterization, comparable datasheets across vendors, reproducible testing, and improved interoperability in design and supply chains.

Related standards

• IEC 60747-1:2006 - Semiconductor devices - Part 1: General (normative companion document)
• Other IEC 60747 parts for discrete devices and semiconductor testing standards (refer to IEC Webstore for related parts and amendments).

Keywords: IEC 60747-8, field‑effect transistor standard, FET testing, MOSFET, JFET, device ratings, RDS(on), gate charge, safe operating area, semiconductor standards.