IEC 60749-17:2019
Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation
Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 17
- Дата публикации:
- 28 марта 2019 г.
- Издание:
- IEC IS 60749 edition 2 version 1
- ICS:
- 31.080.01
IEC 60749-17:2019 is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: updates to better align the test method with MIL-STD 883J, method 1017, including removal of restriction of use of the document, and a requirement to limit the total ionization dose; addition of a Bibliography, including US MIL- and ASTM standards relevant to this test method.
Abstract
Overview
IEC 60749-17:2019 is an international standard developed by the International Electrotechnical Commission (IEC) that specifies test methods for evaluating the neutron irradiation effects on semiconductor devices. This standard, part of the IEC 60749 series on mechanical and climatic test methods for semiconductor devices, focuses specifically on determining susceptibility to non-ionizing energy loss (NIEL) degradation caused by neutron exposure. Designed primarily for military and aerospace applications, this test is destructive and intended to detect degradation in integrated circuits and discrete semiconductor devices.
The latest 2019 edition updates and aligns testing procedures more closely with US military standards, such as MIL-STD-883J method 1017, and introduces a requirement to limit total ionization dose. An expanded bibliography now includes relevant MIL- and ASTM standards, enhancing practical usability and cross-referencing.
Key Topics
-
Neutron Irradiation Test
This test evaluates semiconductor device parameters post-exposure to controlled neutron fluences. It identifies degradation caused by neutron-induced displacement damage and estimates if performance remains within specified limits after irradiation. -
Test Apparatus and Setup
- Utilizes well-characterized neutron sources such as TRIGA® reactors or neutron accelerators that provide either broad or monoenergetic neutron spectra convertible to 1 MeV equivalent neutron energy.
- Dosimetry equipment includes fast-neutron activation foils (e.g., sulfur, iron, nickel) and CaF2 thermoluminescence dosimeters (TLDs) for measuring neutron fluences and gamma dose components accurately.
-
Test Procedure
- Devices to be tested are selected randomly, with a minimum sample size generally set at 10 units, all meeting baseline specifications.
- Pre-exposure electrical tests record baseline parameters.
- Devices are mounted unbiased with lead terminals either shorted (especially for MOS devices) or open following specified mounting fixtures to ensure consistent irradiation conditions.
- Post-exposure electrical tests detect parameter changes and degradation.
- Anomalies are investigated thoroughly, and detailed reporting of results ensures traceability and reproducibility.
-
Safety Protocols
Due to potential activation of devices and creation of radioactive materials, strict safety and handling procedures must be followed under the guidance of Radiation Safety Officers.
Applications
IEC 60749-17:2019 is critical for semiconductor manufacturers, electrical engineers, and quality assurance professionals operating within sectors where devices are exposed to neutron radiation environments. These include:
-
Military Systems
Semiconductors used in weapons systems, guidance electronics, and communication devices require neutron irradiation testing to guarantee reliability in nuclear or neutron-rich environments. -
Aerospace Electronics
Satellites, space probes, and avionics systems encounter high neutron fluxes from cosmic radiation and solar particle events. Devices verified using this standard ensure mission longevity and performance stability. -
Radiation-Hardened Semiconductor Development
Semiconductor designers incorporate neutron irradiation tests to select materials and device architectonics resistant to displacement damage, enabling radiation-hardened microelectronics. -
Quality Control and Compliance
Organizations applying this standard maintain compliance with both international and national standards, essential for contracts demanding documented radiation hardness assurance.
Related Standards
IEC 60749-17:2019 complements and aligns with several critical standards and guidelines, including but not limited to:
-
MIL-STD-883J, Method 1017
A US military standard specifying test methods analogous to IEC 60749-17 for reliability testing of microcircuits, particularly neutron irradiation procedures. -
ASTM Standards for Neutron Dosimetry
Provides guidelines for activation foil calibration, neutron spectrum assessment, and absorbed dose measurements essential to accurate fluence quantification. -
Other IEC 60749 Series Parts
Cover mechanical and climatic test methods tailored for semiconductor devices, forming a comprehensive suite for environmental qualification testing. -
ISO/IEC Directives
Governing the drafting and format of international standards to ensure clarity, consistency, and applicability across global markets.
By adhering to IEC 60749-17:2019, semiconductor device manufacturers and users gain confidence that their products meet rigorous, internationally recognized test methods for neutron irradiation susceptibility-ensuring robustness in the most demanding applications related to defense and aerospace industries. This standard is indispensable for advancing radiation-hardened technology and ensuring reliability in radiation-intense environments.
Технические детали
- Технический комитет
- TC 47 - Semiconductor devices
- SKU
- IEC 60749-17:2019
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