IEC 60749-22-2:2025

Overview - IEC 60749-22-2:2025 (Wire Bond Shear Test Methods)

IEC 60749-22-2:2025 specifies standardized wire bond shear test methods to determine the strength of a ball bond to a die or package bonding surface. The method applies to thermosonic (ball) bonds formed with small-diameter wire (15 µm to 76 µm) and may be performed on pre‑encapsulation or post‑encapsulation devices. The test is destructive and is intended for process development, process control, quality assurance and failure analysis in semiconductor packaging.

Key technical topics and requirements

• Scope and applicability
  • Measures bond strength and evaluates metallurgical bond integrity and ball bond quality.
  • Applicable only when bonds and surrounding geometry allow proper contact with the shear chisel (no interfering structures).
• Wire and bond limits
  • Wire diameters covered: 15 µm to 76 µm (0.0006" to 0.003").
  • For consistent shear results the ball height shall be at least 4.0 µm (current state of the art for shear equipment).
• Apparatus and setup
  • Defines required inspection equipment, measurement instruments, workholders, bond shear equipment, and chisel tool setup.
  • Includes calibration, visual inspection after decapsulation, and procedures for measuring ball diameter to set shear failure criteria.
• Test procedure and data
  • Details performing the bond shear test, post‑shear examination, and bond shear coding for failure modes (Type 1–6: e.g., bond lift, bond shear, cratering).
  • Provides guidance for data collection and interpretation of sheared bond morphology.
• Special cases and annexes
  • Annex A: “stitch on ball” / reverse bonding guidance.
  • Annex B: considerations for ultrasonic (wedge) bonds (less consistent indicator).
  • Annex D: decapsulation concerns for copper wire bonds and etch damage.
  • Annex E: bond contact area methods for comparing shear force.

Practical applications and users

• Primary users: packaging engineers, reliability engineers, process engineers, QA/test labs, and failure analysis teams in semiconductor manufacturing and assembly.
• Typical uses:
  • Process development (optimizing bonding parameters for new wire materials such as copper).
  • Process control and quality assurance (routine evaluation of bond integrity).
  • Root-cause failure analysis after mechanical or thermal stress.
• Keywords: wire bond shear test, bond strength, ball bond shear, thermosonic bonds, copper wire bonding, semiconductor device testing.

Related standards

• Use in conjunction with IEC 60749-22-1:2025 (wire bond pull testing).
• This edition updates and replaces IEC 60749-22 (2002) and is based on JEDEC JESD22‑B120.