IEC 60749-5:2023
Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test
Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 26
- Дата публикации:
- 19 декабря 2023 г.
- Издание:
- IEC IS 60749 edition 3 version 1
- ICS:
- 31.080.01
IEC 60749-5:2023 provides a steady-state temperature and humidity bias life test to evaluate the reliability of non-hermetic packaged semiconductor devices in humid environments. This test method is considered destructive. This edition includes the following significant technical changes with respect to the previous edition: a) The specification of the test equipment is changed to require the need to minimize relative humidity gradients and maximize air flow between semiconductor devices under test; b) The specification of the test equipment fixtures is changed to require the avoidance of condensation on devices under test and on electrical fixtures connecting the devices to the test equipment; c) replacement of references to “virtual junction” with “die”.
Abstract
Overview
IEC 60749-5:2023 - "Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady‑state temperature humidity bias life test" specifies a destructive, steady‑state temperature and humidity bias life test for evaluating the reliability of non‑hermetic packaged semiconductor devices in humid environments. The standard defines chamber, fixture and biasing requirements used to accelerate moisture penetration through encapsulants or along interfaces and to reveal humidity‑related failure mechanisms. This edition aligns with JEDEC JESD22‑A101D.01 and updates equipment and terminology (replacing “virtual junction” with die).
Key topics and technical requirements
- Test purpose: Accelerate and evaluate moisture ingress and humidity‑induced failures for non‑hermetic packages.
- Primary conditions: Typical steady‑state stress is 85 °C / 85 % RH (standard test matrix; duration normally specified, commonly 1000 h unless otherwise required).
- Chamber and fixtures: Test chamber must maintain specified temperature and relative humidity, minimize relative humidity gradients, maximize airflow between DUTs, and ensure dry‑bulb temperature exceeds wet‑bulb temperature. Fixtures must avoid condensation on devices and electrical connections.
- Biasing guidelines: Apply electrical bias to accelerate failure-guidelines include minimizing power dissipation, alternating pin bias, distributing potential differences across metallization, and maximizing voltage within operating range. The standard describes when continuous vs cyclical bias is more severe (e.g., continuous bias is more severe when die temperature rise above ambient is <10 °C or when DUT dissipation <200 mW). Report die temperature rises >5 °C.
- Contamination control: Select board, socket and wiring materials to minimize ionic contamination and contamination release. Use deionized water with minimum resistivity of 1×10^4 Ω·m for processes that require it.
- Destructive test: The method is considered destructive; interim readouts and procedures for ramp‑up, ramp‑down, handling and failure criteria are specified.
Applications and who uses it
- Semiconductor manufacturers performing package qualification and reliability characterization.
- Reliability engineers assessing humidity susceptibility, corrosion risk and long‑term field performance.
- Test laboratories and QA organizations conducting lot qualification, failure analysis and comparative stress screening.
- OEMs in automotive, aerospace, industrial and consumer electronics that need assurance of device behavior in humid environments.
Related standards
- IEC 60749 series (Mechanical and climatic test methods)
- IEC 60749‑4 - Damp heat, steady‑state, Highly Accelerated Stress Test (HAST) - note: results from the 85 °C/85 % RH steady‑state test take priority over HAST when both are performed.
- JEDEC JESD22‑A101D (base document)
Keywords: IEC 60749‑5:2023, steady‑state temperature humidity bias life test, semiconductor reliability, 85°C/85% RH, non‑hermetic packages, die temperature, biasing guidelines, ionic contamination.
Технические детали
- Технический комитет
- TC 47 - Semiconductor devices
- SKU
- IEC 60749-5:2023
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