ISO 17560:2014

Name: ISO 17560:2014 — Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
SKU: ISO 17560:2014
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Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon

Название (английский):

ISO 17560:2014

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon

Статус документа:: Действующий
Формат:: Электронный (PDF)
Количество страниц:: 10
Дата публикации:: 10 сентября 2014 г.
Издание:: ISO IS 17560 edition 2 version 1
ICS:: 71.040.40

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Описание (английский):

ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

Abstract

Похожие стандарты

Стандарты, упомянутые в описании

Overview

ISO 17560:2014 specifies a standardized secondary‑ion mass spectrometry (SIMS) method for depth profiling boron in silicon. It covers procedures using magnetic‑sector or quadrupole mass spectrometers and prescribes depth‑scale calibration by stylus profilometry or optical interferometry. The method applies to single‑crystal, polycrystalline, or amorphous silicon specimens with boron concentrations from 1 × 10^16 to 1 × 10^20 atoms/cm^3 and to crater depths of 50 nm or deeper.

Key topics and requirements

Instrumentation: Use of magnetic‑sector or quadrupole SIMS; oxygen‑ion (O2+) primary beam with positive secondary‑ion polarity or cesium (Cs+) beam with negative polarity.

Detected species: Monitor boron isotopes and appropriate silicon matrix ions (including B, B‑Si cluster ions depending on beam type).

Depth calibration: Measure sputter crater depth by stylus profilometry or optical interferometry (optical interferometry generally suited to ~0.5 μm–5 μm crater depths). Certified reference materials traceable to standards are required for profilometer calibration.

Concentration calibration: Follow ISO 14237 for determination of relative‑sensitivity factors (RSF) and mass discrimination corrections to convert SIMS signals into boron atomic concentration.

Measurement practice: Alternate and cycle boron and silicon ion measurements; select primary‑ion beam current and scan area to capture profile details while avoiding detector nonlinearity at high count rates. Use consistent instrument transmission settings for reference and test specimens.

Specimen prep and quality: Cut to appropriate size, degrease/wash as needed. Surface roughness affects depth accuracy-mirror‑polished wafers are preferred for precise depth‑scale determination.

Background and interference: Be aware of residual gases and hydrogen-related species (e.g., B‑Si‑H) that can create background signals; maintain appropriate vacuum and instrument conditions.

Applications and users

ISO 17560 is intended for:

Semiconductor process engineers and failure‑analysis labs performing boron dopant profiling in silicon devices.

Materials and surface analysis laboratories using SIMS for quantitative depth profiles.

Quality assurance teams in microelectronics manufacturing requiring traceable, reproducible boron concentration and depth measurements.

Practical uses include dopant profiling for device fabrication, diffusion studies, ion‑implantation verification, and research into dopant distribution in silicon wafers and thin films.

Related standards

ISO 14237:2010 - Surface chemical analysis - SIMS - Determination of boron atomic concentration in silicon (used for RSF and concentration calibration).

Keywords: ISO 17560, depth profiling boron in silicon, SIMS, secondary‑ion mass spectrometry, stylus profilometry, optical interferometry, magnetic‑sector, quadrupole, RSF, ISO 14237.

ISO 17560:2014

Abstract

Похожие стандарты

Overview

Key topics and requirements

Applications and users

Related standards

Технические детали

ISO 14237:2010

Surface chemical analysis — Secondary-ion mass spectrometry — Determination of boron atomic concentration in…

BS ISO 14237:2010

Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in si…

BS ISO 17560:2014

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon.