IEC 62373-1:2020 PDF

Name: IEC 62373-1:2020 — Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
SKU: IEC 62373-1:2020
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Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

Название (английский):

IEC 62373-1:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

Статус документа:: Действующий
Формат:: Электронный (PDF)
Количество страниц:: 44
Дата публикации:: 15 июля 2020 г.
Издание:: IEC IS 62373 edition 1 version 1
ICS:: 31.080.30

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Описание (английский):

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). This document also defines the terms pertaining to the conventional BTI test method.

Abstract

Похожие стандарты

Упомянутые в описании и другие стандарты IEC

Overview

IEC 62373-1:2020 is an international standard developed by the International Electrotechnical Commission (IEC) that specifies the fast bias temperature instability (BTI) test for silicon-based metal-oxide semiconductor field-effect transistors (MOSFETs). This standard addresses the critical reliability concern of BTI degradation, which impacts the performance and lifetime of MOSFET devices. It presents a precise and accelerated measurement procedure designed to minimize recovery effects that occur immediately after removing electrical stress, improving the accuracy of degradation assessment.

BTI degradation occurs in MOSFETs when gate bias and elevated temperature conditions cause threshold voltage shifts, impacting transistor stability and device reliability. The significance of IEC 62373-1 lies in its innovative fast test method, which captures degradation before significant recovery transpires, overcoming limitations in the traditional lengthy BTI test methods outlined in earlier standards.

Key Topics

Fast BTI Test Procedure: The standard details the step-by-step measurement method targeting fast evaluation of threshold voltage shift and related device degradation parameters, while minimizing recovery time losses.

Degradation Parameters: IEC 62373-1 defines how to express degradation metrics such as shifts in threshold voltage (V_th), drain currents in saturation and linear regions (I_Dsat, I_Dlin), and measurements in weakly inverted and subthreshold device operation regions.

Test Equipment Requirements: Specifications for using wafer probers and measurement equipment designed to achieve rapid switching, precise temperature control, and accurate electrical characterization during BTI stress testing.

Test Samples: Guidelines for selecting MOSFET samples including channel length, width, device structure, wafer process conditions, and the role of antenna protection diodes to ensure representative and reliable test results.

Test Conditions: It covers critical parameters like applied voltage stress, electric field strength, test temperature, read points, and total test durations optimized for fast measurement cycles.

Lifetime Estimation: Procedures to extrapolate the BTI degradation data to estimate long-term device lifetime, aligning accelerated test results with practical device usage scenarios.

Recovery Effect Awareness: Emphasis on understanding and minimizing the impact of BTI recovery that can otherwise obscure real degradation when using slower conventional testing.

Applications

The IEC 62373-1:2020 standard is essential for semiconductor manufacturers, device engineers, and reliability testing laboratories focused on:

MOSFET Reliability Testing: Implementing fast and reproducible bias temperature instability tests to evaluate MOSFETs during process development and quality assurance.

Device Qualification: Ensuring devices meet reliability targets for automotive, industrial, consumer electronics, and high-performance computing applications where MOSFET stability under stress is critical.

Process Optimization: Supporting semiconductor process engineers in optimizing fabrication steps by providing reliable data on MOSFET threshold voltage instability and degradation kinetics.

Lifetime Prediction: Enabling accurate lifetime forecasts for MOSFET components integrated into complex electronic systems to improve product design and warranty planning.

Standardized Testing Framework: Facilitating uniformity and comparability of BTI test results worldwide through adherence to an internationally accepted testing methodology.

Related Standards

IEC 62373 (2006) – The original standard describes the conventional BTI test method with longer measurement times, serving as the baseline reference for bias temperature instability testing of MOSFETs.

Other Semiconductor Device Testing Standards – Procedures complementing BTI evaluation such as electromigration, hot carrier injection, and time-dependent dielectric breakdown tests.

ISO/IEC Terminology Standards – Supporting terms and definitions used in IEC 62373-1 are harmonized with established ISO and IEC electrotechnical vocabularies for consistency in global standardization.

By following IEC 62373-1:2020, semiconductor industry stakeholders gain a robust procedural framework for fast, accurate, and reliable bias temperature instability testing of MOSFETs, critical to advancing device performance and ensuring long-term stability under operating stress conditions.

IEC 62373-1:2020 PDF

Abstract

Похожие стандарты

Overview

Key Topics

Applications

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