IEC 62374:2007 PDF
Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films
Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 43
- Дата публикации:
- 29 марта 2007 г.
- Издание:
- IEC IS 62374 edition 1 version 1
- ICS:
- 31.080.99
Provides a test method of Time Dependent Dielectric Breakdown (TDDB) for gate dielectric films on semiconductor devices and a product lifetime estimation method of TDDB failure
Abstract
Overview
IEC 62374:2007 specifies a standardized test method for evaluating the Time Dependent Dielectric Breakdown (TDDB) of gate dielectric films used in semiconductor devices. This international standard by the International Electrotechnical Commission (IEC) provides crucial procedures for assessing the reliability and lifespan of gate oxide films that serve as insulators in semiconductor components. TDDB testing is key to predicting product failure modes related to dielectric breakdown over time under electrical stress.
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