Overview
ISO 13083:2015 specifies a standardized method for defining and calibrating the spatial (lateral) resolution of electrical scanning probe microscopes (ESPMs), in particular scanning capacitance microscopes (SCM) and scanning spreading resistance microscopes (SSRM). The standard uses a sharp-edged artefact (sharp-edge method) to measure resolution for 2D-dopant imaging and other electrical-imaging applications in semiconductors. ISO 13083:2015 provides procedures, measurement steps and reporting requirements so results are reproducible and comparable across instruments and laboratories.
Key topics and technical requirements
- Scope and targets: Focused on SCM and SSRM as ESPM modes for electrical imaging of carrier distributions and local resistivity.
- Sharp-edge method: Defines spatial resolution by scanning across an electrically abrupt interface and measuring the tip response profile. The standard adopts the 10%–90% width criterion to quantify lateral resolution.
- Measurement procedure:
- Selection of a suitable calibration sample (sharp-edged artefact).
- Instrument setup and parameterization before measurement.
- Data collection: controlled line-scans across the edge in contact mode.
- Data analysis: extracting resolution from the measured profile and assessing random contributions (noise, fluctuations).
- Recording of measurement parameters for traceability and reproducibility.
- Factors affecting resolution: probe apex geometry and coating, tip radius, mechanical probe–sample contact, surface roughness, electrical contrast, pixelation, detector sensitivity and signal-to-noise ratio.
- Examples and guidance: Informative annexes provide example measurements for SCM and SSRM to illustrate the method and analysis.
Applications and users
ISO 13083:2015 is practical for:
- Semiconductor process and device engineers performing 2D dopant imaging and junction delineation.
- Metrology labs calibrating SCM/SSRM spatial resolution for comparison of tools.
- R&D teams developing high-resolution ESPM techniques and probe manufacturers validating tip performance.
- Quality assurance and test labs that require standardized, repeatable methods for electrical scanning probe microscopy.
Benefits include improved comparability of lateral resolution claims, more reliable 2D electrical imaging, and better traceability when characterizing nanoscale carrier distributions in semiconductor devices.
Related standards
- ISO 18115-2 (vocabulary for scanning-probe microscopy): normatively referenced for terms and definitions.
- ISO 18516 is cited as a comparable sharp-edge approach used in micro-beam spectroscopy (depth-profiling), providing contextual methodology for resolution assessment.
Keywords: ISO 13083:2015, spatial resolution, SCM, SSRM, ESPM, sharp-edge method, lateral resolution, 2D-dopant imaging, scanning capacitance microscopy, scanning spreading resistance microscopy.