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1 Scope This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temp…
Overview IEC 63275-1:2022 is an international standard published by the International Electrotechnical Commission (IEC) that defines a reliability test method for silicon carbide (SiC) discrete metal…