IEC 62047-34:2019

Overview

IEC 62047-34:2019 - "Semiconductor devices - Micro‑electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure‑sensitive device on wafer" - specifies test conditions and standardized test methods for electrical characteristics, static performances and thermal performances of piezoresistive MEMS pressure‑sensitive devices at wafer level. The standard covers both open‑loop and closed‑loop Wheatstone‑bridge device implementations and defines the environmental, instrumentation and sampling requirements for reliable wafer‑level measurement.

Key topics and technical requirements

• Scope: Wafer‑level test methods for piezoresistive pressure sensors (open and closed loop).
• Test conditions:
  • Standard atmospheric testing range: 15 °C–35 °C, 20 %–80 % RH, 86 kPa–106 kPa.
  • Standard reference conditions: 20 °C, 65 % RH, 101.3 kPa (used for corrections).
  • Electromagnetic and vibration requirements: avoid external fields and mechanical vibration (device‑specific allowances possible).
• Test system components: probe station, pressure control device, heating/cooling system, excitation power supply, reading/recording instruments.
• Instrumentation tolerances:
  • Pressure controller intrinsic error ≤ 1/3 of device intrinsic error bound.
  • Temperature measurement accuracy: ±2 °C around setpoint.
  • Excitation and readout fluctuation/ error bounds: ≤ 1/5 of device intrinsic error bound.
• General provisions: requirement for valid metrological verification certificates and recommended preheating per instrument manuals.
• Resistance measurements:
  • Procedures for closed‑loop (measure opposite bridge leg resistances) and open‑loop (measure adjacent leg resistances).
• Static performance tests (five‑point wafer sampling recommended; sampling plan per IEC 61193‑2):
  • Zero output, output under normal pressure, full‑scale span, nonlinearity, hysteresis, repeatability, accuracy, sensitivity, zero drift.
• Thermal performance: test methods and conditions for evaluating temperature‑dependent behavior and drift (thermal test procedures and acceptance criteria are defined in the standard).

Applications and practical value

• Wafer‑level qualification and acceptance testing of MEMS piezoresistive pressure sensors.
• Production process control, yield monitoring and device characterization in MEMS fabs.
• R&D and sensor design validation to quantify static and thermal behavior.
• Calibration and metrology labs implementing standardized wafer probe tests.

Who uses this standard

• MEMS sensor manufacturers and process engineers
• Test and quality assurance engineers
• Semiconductor wafer probe/test houses
• Metrology and calibration laboratories
• Product development teams validating sensor performance

Related standards

• IEC 61193‑2 (sampling plans for electronic components)
• IEC 60747‑14‑3 (semiconductor pressure sensor terminology and related requirements)

Keywords: IEC 62047-34:2019, MEMS piezoresistive pressure-sensitive device, test methods, wafer-level testing, static performance, thermal performance, probe station, five-point sampling.