IEC 62047-46:2025
Semiconductor devices - Micro-electromechanical devices - Part 46: Silicon based MEMS fabrication technology - Measurement method of tensile strength of nanoscale thickness membrane
Semiconductor devices - Micro-electromechanical devices - Part 46: Silicon based MEMS fabrication technology - Measurement method of tensile strength of nanoscale thickness membrane
- Статус документа:
- Действующий
- Формат:
- Электронный (PDF)
- Количество страниц:
- 15
- Дата публикации:
- 23 апреля 2025 г.
- Издание:
- IEC IS 62047 edition 1 version 1
- ICS:
- 31.080.99
IEC 62047-46:2025 specifies the requirements and testing method to measure the tensile strength of membrane with nanoscale thickness (length from 100 μm to 5 000 μm, width from 100 μm to 1 000 μm, thickness from 50 nm to 500 nm) which is fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS). This document is applicable to in-situ tensile strength measurement of nanoscale thickness membrane manufactured by microelectronics technology and related micromachining technology. With the devices scaling, the tensile strength degradation, induced by defects and contaminations, becomes severer. This document specifies an in-situ testing method of the tensile strength of membrane with nanoscale thickness based on a MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens. Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.
Abstract
Overview
IEC 62047-46:2025 defines an in‑situ tensile strength measurement method for silicon-based MEMS membranes with nanoscale thickness. The standard covers membranes fabricated by micromachining and microelectronics technology whose dimensions fall in the ranges: length 100 µm–5 000 µm, width 100 µm–1 000 µm, thickness 50 nm–500 nm. It specifies design, fabrication and test‑execution requirements for an on‑chip tester that enables tensile testing without specialized instruments such as AFM or nanoindenters.
Key topics and requirements
- Scope and applicability
- In‑situ tensile strength measurement of nanoscale thickness membranes produced in the same process and wafer as MEMS devices.
- In‑situ on‑chip tester design
- Tester integrates testing structure and testing device on one chip (on‑chip tester).
- Overlap between testing structure and testing device must exceed 30 µm to prevent detachment during test.
- End geometry must ensure fracture occurs in the mid‑section of the membrane.
- Folded beam stiffness should be at least two orders of magnitude lower than the testing structure stiffness so measured force approximates tensile force.
- Fixed column and ring structures must form a process‑limited fixed hinge to maintain axial tensile loading.
- Deflection ruler must be readable with optical microscopy (design guidance in Annex A).
- Fabrication
- Tester and device must share the same silicon process; in‑situ tester made of crystalline silicon (examples include bulk silicon processes and silicon–glass anodic bonding).
- Testing environment and method
- Tests are performed in the device’s manufacturing environment (actual MEMS chip environment).
- The method monitors device deformation under a driving load using microscopy; tensile strength is computed from the maximum observed force divided by original cross‑sectional area.
- Measurement resolution
- Aspect ratios of elastic beams and testing structures must be selected to achieve a stress measurement resolution of ≤100 MPa.
Applications and users
- MEMS device designers seeking process‑relevant mechanical property data for design validation.
- Process engineers in semiconductor fabs for monitoring tensile strength degradation due to defects or contamination.
- R&D teams developing silicon‑based micro‑electromechanical devices who need on‑wafer, non‑intrusive tensile testing.
- Test laboratories that implement wafer‑level mechanical characterization without AFM/nanoindenter equipment.
Related standards
- Part of the IEC 62047 series (Micro‑electromechanical devices). See IEC 62047‑45:2025 for related terminology and testing structure/device definitions.
Keywords: IEC 62047-46:2025, tensile strength, nanoscale thickness membrane, in‑situ on‑chip tester, silicon-based MEMS fabrication, micromachining, tensile testing.
Технические детали
- Технический комитет
- SC 47F - Micro-electromechanical systems
- SKU
- IEC 62047-46:2025
Похожие стандарты
Упомянутые в описании и другие стандарты IEC
IEC 62047-45:2025
ДействующийSemiconductor devices - Micro-electromechanical devices - Part 45: Silicon based MEMS fabrication technology…
Overview IEC 62047-45:2025 defines an in‑situ, on‑chip measurement method for the impact resistance of nanostructures fabricated by silicon‑based micromachining for MEMS (micro‑electromechanical syst…
IEC 62047-29:2017
ДействующийSemiconductor devices - Micro-electromechanical devices - Part 29: Electromechanical relaxation test method f…
Overview IEC 62047-29:2017 specifies an electromechanical relaxation test method for freestanding conductive thin films under room temperature. The standard defines how to measure time-dependent elec…
IEC 62590-2-2:2026
ДействующийRailway applications - Electronic power converters for fixed installations - Part 2-2: DC Traction applicatio…
Overview IEC 62590-2-2:2026 is an international standard developed by the International Electrotechnical Commission (IEC) focusing on railway applications, specifically the electronic power converter…
IEC 61753-042-02:2026
ДействующийFibre optic interconnecting devices and passive components - Performance standard - Part 042-02: Plug-pigtail…
Overview IEC 61753-042-02:2026 establishes the minimum performance, test, and measurement requirements for plug-pigtail and plug-receptacle style OTDR (Optical Time-Domain Reflectometer) reflecting d…
IEC 61837-2:2018
ДействующийSurface mounted piezoelectric devices for frequency control and selection - Standard outlines and terminal le…
Overview IEC 61837-2:2018 - Surface mounted piezoelectric devices for frequency control and selection - Standard outlines and terminal lead connections - Part 2: Ceramic enclosures (Edition 3.0, 2018…
IEC 61851-23-1:2026
ДействующийElectric vehicle conductive charging system - Part 23-1: DC electric vehicle supply equipment - Automated con…
Overview IEC 61851-23-1:2026 is an international standard published by the International Electrotechnical Commission (IEC) that specifies requirements for DC electric vehicle supply equipment (EVSE)…
IEC 63506:2026
ДействующийCalibration of the prompt fission neutron logging tools
Overview IEC 63506:2026 - Calibration of the Prompt Fission Neutron Logging Tools is the international standard that specifies the calibration methods for prompt fission neutron (PFN) logging tools,…
IEC 63589-1:2026
ДействующийLinear accelerator - Electron linear accelerator for radiation processing - Part 1: General requirements and…
Overview IEC 63589-1:2026 specifies the general requirements and test methods for electron linear accelerator devices used in radiation processing. Developed by the International Electrotechnical Com…