ASTM F419-94
Test Method for Determining Carrier Density in Silicon Epitaxial Layers by Capacitance-Voltage Measurements on Fabricated Junction or Schottky Diodes (Withdrawn 2001)
Test Method for Determining Carrier Density in Silicon Epitaxial Layers by Capacitance-Voltage Measurements on Fabricated Junction or Schottky Diodes (Withdrawn 2001)
- Статус документа:
- Отменён
- Формат:
- Электронный (PDF)
- Дата публикации:
- 16 августа 2017 г.
- SKU:
- ASTM F419-94
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Abstract
Scope1.1 This test method covers the measurement of carrier density in silicon epitaxial layers. The precision that can be expected depends upon the carrier-density inhomogeneities parallel and perpendicular to the junction and upon the car...
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