ASTM F996-11(2018)
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics (Withdrawn 2023)
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics (Withdrawn 2023)
- Статус документа:
- Отменён
- Формат:
- Электронный (PDF)
- Дата публикации:
- 30 ноября 2023 г.
- SKU:
- ASTM F996-11(2018)
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Abstract
Significance and Use 5.1 The electrical properties of gate and field oxides are altered by ionizing radiation. The method for determining the dose delivered by the source irradiation is discussed in Practices E666, E668, E1249, and Guide E...
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