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1 Scope This part of IEC 62373 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). Thi…
Overview IEC 62373-1:2020 is an international standard developed by the International Electrotechnical Commission (IEC) that specifies the fast bias temperature instability (BTI) test for silicon-bas…
Overview IEC 62373:2006 specifies the bias-temperature (BT) stability test method for metal-oxide semiconductor field-effect transistors (MOSFETs). This international standard issued by the Internati…