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Overview IEC 63068-3:2020 is an international standard developed by the International Electrotechnical Commission (IEC) that defines a non-destructive test method for detecting defects in silicon car…
Overview IEC 63068-2:2019 specifies a non-destructive optical inspection test method for detecting as-grown defects in commercially available 4H‑SiC homoepitaxial wafers used for power devices. Part…
Overview IEC 63068-1:2019 - "Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects" - de…
Overview IEC 63068-4:2022 defines a non-destructive, reproducible procedure for identifying and evaluating defects in as-grown 4H‑SiC homoepitaxial wafers used for power devices. The standard prescri…
What is BS IEC 63068-1 - Silicon carbide homoepitaxial wafer about? BS IEC 63068-1 is the first part of an international standard used for semiconductor devices that helps in classifying the defects…
What is BS IEC 63068 ‑ 3 about? BS IEC 63068 ‑ 3 is the international standard for semiconductors devices that specifies the test methods which helps in detecting the defects in silicon carbide homoe…
What is BS IEC 63068 ‑ 2 - Silicon carbide homoepitaxial (SiC) wafer about? BS IEC 63068 is a series of international standards for semiconductor devices that specifies the defects in silicon carbide…